IRGB4607DPbF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
G Gate
C Collector
E E.
* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding
Features
Low VCE(ON) and Switching Losses 5µs.
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